SKW07N120 Infineon Technologies, SKW07N120 Datasheet
SKW07N120
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SKW07N120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 0.7mJ K07N120 150 C Symbol jmax jmax 150 SKW07N120 G PG-TO-247-3 Package PG-TO-247-3 Value 1200 C E 16.5 7 125 -55...+150 260 s Rev. 2_2 C E Unit ...
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... V I =350 A =1200V,V = 150 =0V,V =20V =20V =25V f=1MHz =15V =15V 200 150 SKW07N120 Max. Value Unit 1 K/W 2.5 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4.3 2.0 2 100 - - 400 - - 100 720 870 110 - Rev. 2_2 Sep 08 ...
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... Conditions 150 =15V/0V 80nH =40pF E Energy losses include t s “tail” and diode reverse recovery 150 500A SKW07N120 Value Unit min. typ. max 440 570 - 0.6 0 0.4 0.55 - 1 400 A/ s Value Unit min. typ. max 490 590 - 1.0 1.2 ...
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... Figure 2. Safe operating area ( 20A 15A 10A 5A 0A 100°C 125°C 25°C Figure 4. Collector current as a function of case temperature ( SKW07N120 10V 100V 1000V COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE C 15V, T ...
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... Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKW07N120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I =16A =4A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev. 2_2 Sep 08 ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SKW07N120 t d(off d(on 100 R , GATE RESISTOR G = 150 +15V/0V 8A max. typ. min. 0°C 50° ...
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... Fig K K off - K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SKW07N120 *) E and E include losses on ts due to diode recovery 100 R , GATE RESISTOR G = 150 +15V/0V 8A D=0.5 0.2 0.1 0. 0.02 0.1020 0.77957 ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage ( 1MHz) GE 150A 100A 50A 0A 14V 15V 10V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V 8 SKW07N120 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V GATE EMITTER VOLTAGE ...
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... R dynamic test circuit in Fig.E ) 300A =7A F 200A/ s 100A/ s 0A/ s 200A/ s 800A Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 800V dynamic test circuit in Fig SKW07N120 I = =3.5A F 400A/ s 600A/ s 800A DIODE CURRENT SLOPE = 150 =3. =7A F 400A/ s ...
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... Power Semiconductors 3.0V 2.5V 2.0V 1.5V T =25°C J 1.0V 0.5V 0. 0°C Figure 26. Typical diode forward voltage as a function of junction temperature , ( s ) 0.09354 0.00543 0.00042 10ms 100ms 1s 10 SKW07N120 I =14A =3.5A F 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2_2 Sep 08 ...
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... SKW07N120 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2_2 Sep 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SKW07N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2_2 Sep 08 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SKW07N120 13 Rev. 2_2 Sep 08 ...