IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 9

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21. IGBT transient thermal resistance
10
10
-1
-2
K/W
K/W
1µs
D=0.5
0.05
(D = t
0.2
0.1
10µs 100µs 1ms
single pulse
t
p
P
0.01
/ T)
,
0.02
PULSE WIDTH
R
0.18355
0.12996
0.09205
0.03736
0.00703
R , ( K / W )
1
C
1
=
1
/ R
1
10ms 100ms
C
7.425*10
8.34*10
7.235*10
1.035*10
4.45*10
2
=
, ( s )
2
/ R
R
2
-3
-5
2
-2
-4
-4
9
TrenchStop
®
Series
IGB50N60T
Rev. 2.5 04.03.2009
p