IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 5

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
120A
100A
8 0 A
6 0 A
4 0 A
2 0 A
80A
60A
40A
20A
0 A
0A
0 V
0V
V
V
GE
CE
=20V
V
,
(T
(V
11V
13V
15V
COLLECTOR
GE
9V
7V
j
CE
2 V
= 25°C)
,
GATE-EMITTER VOLTAGE
=20V)
T
1V
J
= 1 7 5 °C
2 5 °C
4 V
-
EMITTER VOLTAGE
2V
6 V
8 V
3V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
120A
100A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
80A
60A
40A
20A
0A
0°C
0V
®
V
V
Series
GE
CE
=20V
(T
saturation voltage as a function of
junction temperature
(V
T
,
11V
13V
15V
7V
COLLECTOR
J
9V
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
1V
= 15V)
50°C
-
EMITTER VOLTAGE
2V
IGB50N60T
100°C
Rev. 2.5 04.03.2009
3V
I
I
I
C
150°C
C
C
=50A
=25A
=100A
4V
p