IGB50N60T Infineon Technologies, IGB50N60T Datasheet - Page 6

• Manufacturer Part Number: IGB50N60T
• Description: IGBT 600V 100A 333W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB50N60T

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Power - Max: 333W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 333W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 100.0 A
• Ic(max) @ 100°: 50.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
10ns
25°C
0A
t
d(on)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
J
I
CE
GE
,
C
20A
,
JUNCTION TEMPERATURE
= 400V, V
= 0/15V, I
COLLECTOR CURRENT
75°C
t
f
40A
C
GE
100°C 125°C 150°C
= 50A, R
= 0/15V, R
J
CE
=175°C,
60A
= 400V,
G
=7Ω,
G
80A
= 7Ω,
t
d(off)
t
t
d(off)
d(on)
t
r
t
6
TrenchStop
t
f
r
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
10ns
7V
6V
5V
4V
3V
2V
1V
0V
-50°C
®
Series
m in.
t
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
d(off)
T
t
t
C
r
CE
f
J
,
0°C
= 0.8mA)
= 400V, V
JUNCTION TEMPERATURE
R
t
d(on)
G
typ.
,
GATE RESISTOR
50°C
GE
IGB50N60T
m ax.
= 0/15V, I
J
Rev. 2.5 04.03.2009
= 175°C,
100°C
C
= 50A,
150°C
p