IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 8

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17. Typical gate charge
Figure 19. Typical short circuit collector
1 5V
1 0V
150A
125A
100A
5V
0V
75A
50A
25A
0A
0nC
12V
V
(I
current as a function of gate-
emitter voltage
(V
GE
C
CE
=10 A)
,
20 nC
GATE
Q
14V
≤ 400V, T
GE
,
-
GATE CHARGE
EMITTETR VOLTAGE
1 20V
4 0nC
j
16V
≤ 150°C)
60n C
18V
4 80 V
8
TrenchStop
Figure 18. Typical capacitance as a function
Figure 20. Short circuit withstand time as a
12µs
10µs
100pF
8µs
6µs
4µs
2µs
0µs
10pF
1nF
10V
0V
®
V
CE
Series
V
of collector-emitter voltage
(V
function of gate-emitter voltage
(V
T
,
GE
Jmax
COLLECTOR
GE
11V
CE
,
=600V, start at T
=0V, f = 1 MHz)
GATE
<150°C)
10V
-
EMITETR VOLTAGE
12V
-
EMITTER VOLTAGE
IGB10N60T
Rev. 1.2 12.08.2009
13V
J
=25°C,
20V
14V
C
C
C
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