IGB10N60T Infineon Technologies, IGB10N60T Datasheet
IGB10N60T
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IGB10N60T Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. ® TrenchStop Series ® and Fieldstop technology CE(sat) http://www.infineon.com/igbt/ T Marking Code j,max 1.5V G10T60 175°C Symbol jmax ≤ 175° IGB10N60T PG-TO263-3-2 Package PG-TO263-3-2 Value Unit 600 ±20 V μs 5 110 W °C -40...+175 -55...+175 260 Rev. 1.2 12.08.2009 ...
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... 600V 25° 5° 20V 10A 25V 0V 80V 10A ≤5μ 5V 400V 25° IGB10N60T p Max. Value Unit 1.35 K Value Unit min. typ. max. 600 - - V - 1.5 2.05 - 1.8 - 4.1 4.6 5.7 µ 1000 - - 100 none Ω - 551 - 100 - A Rev. 1.2 12.08.2009 ...
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... 23Ω 0nH , σ =40pF E σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ due to dynamic test circuit in Figure E. σ 3 IGB10N60T p Value Unit min. typ. max 215 - - 0. 0. 0.43 - Value Unit min. typ. max ...
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... Figure 2. Safe operating area ( 400V, V =15V) GE 30A 20A 10A 0A 25° CASE TEMPERATURE C Figure 4. Collector current as a function of case temperature ≥ 15V IGB10N60T p t =1µs p 5µs 20µs 100µs 500µs 10ms DC 100V 1000V - EMITTER VOLTAGE ≤175°C; = 25° 75°C 125°C ≤ ...
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... Figure 6. Typical output characteristic (T = 175°C) j 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50°C 0° JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGB10N60T EMITTER VOLTAGE I =20A C I =10A C I =5A C 50°C 100°C 150°C Rev. 1.2 12.08.2009 ...
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... Dynamic test circuit in Figure d(off) typ in -50°C 0° JUNCTION TEMPERATURE J Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA) C =23Ω, 6 IGB10N60T p t d(off 30Ω 40Ω 50Ω , GATE RESISTOR = 175° 0/15V 10A ax. 50°C 100°C 150°C Rev. 1.2 12.08.2009 ...
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... 0,0m J 150°C 300V 350V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load 23Ω 0/15V Dynamic test circuit in Figure E) 7 IGB10N60T p include losses off 30Ω 40Ω 50Ω GATE RESISTOR = 175° 0/15V 10A include losses ...
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... V , GATE GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (V =600V, start <150°C) Jmax 8 IGB10N60T p C iss C oss C rss 10V 20V - EMITTER VOLTAGE 12V 13V 14V - EMITETR VOLTAGE =25°C, J Rev. 1.2 12.08.2009 ...
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... R 0. K/W 0.02 0.01 τ single pulse -2 10 K/W 10µs 100µs 1ms 10ms t , PULSE WIDTH P Figure 21. IGBT transient thermal resistance ( ® TrenchStop Series τ 6.53*10 -3 8.33*10 -4 7.37*10 -5 7.63* τ 100ms 9 IGB10N60T p Rev. 1.2 12.08.2009 ...
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... IGB10N60T ® TrenchStop Series PG-TO263-3 Rev. 1.2 12.08.2009 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses IGB10N60T ® TrenchStop Series i Figure C. Definition of diodes switching characteristics τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity τ τ =60nH σ =40pF. σ Rev. 1.2 12.08.2009 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IGB10N60T ® TrenchStop Series ...