IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 7

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
1,0m J
0,8m J
0,6m J
0,4m J
0,2m J
0,0m J
0,6mJ
0,5mJ
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
0A
E
E
E
ts
off
on
*) E
*
*) E
*
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
du e to diode recovery
due to diode recovery
50°C
J
I
CE
on
GE
,
on
C
,
JUNCTION TEMPERATURE
and E
= 400V, V
and E
= 0/15V, I
COLLECTOR CURRENT
5A
ts
ts
include losses
include losses
C
100°C
GE
10A
= 10A, R
= 0/15V, R
J
CE
= 175°C,
= 400V,
G
= 23Ω,
15A
G
150°C
= 23Ω,
E
E
E
off
on
7
TrenchStop
ts
*
*
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
0,8 mJ
0,6 mJ
0,4 mJ
0,2 mJ
0,0 mJ
0,8m J
0,6m J
0,4m J
0,2m J
0,0m J
300V
10Ω
®
V
E
E
E
CE
Series
ts
off
on
*) E
*) E
*
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*
,
due to diode recovery
due to diode recovery
CE
GE
350V
COLLECTOR
on
on
20Ω
= 400V, V
= 0/15V, I
R
and E
and E
G
,
GATE RESISTOR
400V
ts
ts
include losses
include losses
30Ω
-
EMITTER VOLTAGE
C
GE
IGB10N60T
= 10A, R
450V
= 0/15V, I
J
J
Rev. 1.2 12.08.2009
= 175°C,
= 175°C,
40Ω
500V
G
= 23Ω,
C
= 10A,
50Ω
550V
E
E
E
on
ts
off
*
*
p