IGB03N120H2 Infineon Technologies, IGB03N120H2 Datasheet - Page 4

• Manufacturer Part Number: IGB03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO263-3
• Manufacturer: Infineon Technologies

Specifications of IGB03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-263
• No.: RoHS Compliant
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
GE
12A
10A
60W
50W
40W
30W
20W
10W
j
j
8A
6A
4A
2A
0A
0W
10Hz
= +15V/0V, R
150 C, D = 0.5, V
150 C)
25°C
f,
T
100Hz
SWITCHING FREQUENCY
50°C
C
,
I
CASE TEMPERATURE
c
T
G
T
C
C
=80°C
= 82 )
=110°C
75°C
1kHz
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
0,1A
,01A
Figure 4. Collector current as a function of
case temperature
(V
10A
1A
12A
10A
GE
8A
6A
4A
2A
0A
1V
25°C
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
10V
,
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
-
EMITTER VOLTAGE
IGB03N120H2
100V
100°C
j
150 C)
125°C
Rev. 2.4 Oct. 07
1000V
t
p
=1 s
100 s
500 s
5 s
10 s
50 s
DC
150°C