IGB03N120H2 Infineon Technologies, IGB03N120H2 Datasheet - Page 2

• Manufacturer Part Number: IGB03N120H2
• Description: IGBT 1200V 9.6A 62.5W TO263-3
• Manufacturer: Infineon Technologies

Specifications of IGB03N120H2

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 3A
• Current - Collector (ic) (max): 9.6A
• Power - Max: 62.5W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc Collector Current: 3A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 62.5W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: TO-263
• No.: RoHS Compliant
• No. Of Pins: 3
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed2 30-100 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 9.6 A
• Ic(max) @ 100°: 3.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
1)
collector connection. PCB is vertical without blown air.
Power Semiconductors
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
V
V
V
I
I
g
C
C
C
Q
L
Symbol
C E S
G E S
f s
E
( B R ) C E S
C E ( s a t )
G E ( t h )
t h J C
t h J A
i s s
o s s
r s s
G a t e
V
V
T
T
V
T
I
V
T
T
V
V
V
V
f= 1 MH z
V
V
C
j
j
j
j
j
G E
G E
G E
C E
C E
C E
C E
G E
C C
G E
=2 5 C
=1 5 0 C
=2 5 C
= 90 A , V
=2 5 C
=1 5 0 C
2
= 0V , I
= 12 0 0V , V
= 0V , V
= 20 V , I
= 25 V ,
= 0V ,
= 96 0 V, I
= 15 V
= 15 V , I
= 10 V , I
Conditions
Conditions
2
(one layer, 70 m thick) copper area for
C
G E
C E
= 3 00 A
C
=2 0 V
= 3 A
C
C
C
= V
=3 A
G E
= 3 A
= 3 A,
G E
= 0V
1200
min.
2.1
-
-
-
-
-
-
-
-
-
-
-
-
Max. Value
IGB03N120H2
Typ.
Value
205
2.0
2.2
2.5
2.4
40
24
22
3
2
7
7
-
-
-
-
Rev. 2.4 Oct. 07
max.
100
2.8
3.9
20
80
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A