SGB02N120 Infineon Technologies, SGB02N120 Datasheet - Page 7

• Manufacturer Part Number: SGB02N120
• Description: IGBT NPT 1200V 6.2A 62W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB02N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB02N120XT

Power Semiconductors
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
2.0mJ
1.5mJ
1.0mJ
0.5mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
CE
GE
-50°C
= 800V, V
= +15V/0V, I
0A
*) E
due to diode recovery.
*) E
due to diode recovery.
T
j
I
,
on
on
C
JUNCTION TEMPERATURE
,
and E
and E
0°C
COLLECTOR CURRENT
GE
2A
C
= +15V/0V, R
j
CE
ts
ts
= 150 C,
= 2A, R
include losses
include losses
= 800V,
50°C
4A
G
= 91 ,
100°C
G
6A
= 9 1 ,
150°C
8A
E
E
E
E
E
on
E
ts
on
off
ts
*
off
*
*
*
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
0.5mJ
0.4mJ
0.3mJ
0.2mJ
0.1mJ
0.0mJ
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
10
10
10
CE
-1
-2
0
K/W
K/W
K/W
= 800V, V
p
0
1µs
/ T)
0.05
0.02
0.01
0.2
0.1
D=0.5
*) E
due to diode recovery.
on
10µs
and E
single pulse
R
GE
50
G
t
p
,
= +15V/0V, I
,
j
GATE RESISTOR
100µs
ts
= 150 C,
PULSE WIDTH
include losses
SGB02N120
100
R
0.66735
0.70472
0.62778
R , ( K / W )
1ms
1
C
1
=
C
Rev. 2_3
1
/ R
= 2A,
10ms 100ms
1
150
C
0.04691
0.00388
0.00041
2
=
, ( s )
2
/R
E
R
2
E
E
Jan 07
off
2
on
ts
*
*
1s