SGB02N120 Infineon Technologies, SGB02N120 Datasheet - Page 6

• Manufacturer Part Number: SGB02N120
• Description: IGBT NPT 1200V 6.2A 62W TO263-3
• Manufacturer: Infineon Technologies

Specifications of SGB02N120

• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 2A
• Current - Collector (ic) (max): 6.2A
• Power - Max: 62W
• Input Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SGB02N120XT

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E)
10ns
10ns
CE
GE
-50°C
= 800V, V
= +15V/0V, I
0A
t
f
T
t
f
j
I
t
t
,
t
r
C
d(on)
d(on)
t
JUNCTION TEMPERATURE
,
d(off)
t
0°C
d(off)
2A
COLLECTOR CURRENT
GE
t
C
= +15V/0V, R
j
CE
r
= 150 C,
= 2A, R
= 800V,
50°C
4A
G
= 91 ,
100°C
G
6A
= 9 1 ,
150°C
8A
6
100ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
10ns
C
CE
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= 800V, V
0
T
j
,
t
JUNCTION TEMPERATURE
r
0°C
t
t
R
d(on)
GE
d(off)
t
50
f
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
SGB02N120
50°C
100
C
Rev. 2_3
100°C
= 2A,
150
150°C
max.
typ.
min.
Jan 07