SGB02N120 Infineon Technologies, SGB02N120 Datasheet
SGB02N120
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SGB02N120 Summary of contents
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 0.11mJ GB02N120 150 C Symbol jmax 150 SGB02N120 PG-TO-263-3-2 Package PG-TO-263-3-2 Value 1200 C E 6.2 2.8 9.6 9 -55...+150 245 s Rev. 2_3 Unit ...
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... Short circuit collector current 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors Symbol Conditions Symbol Conditions SGB02N120 Max. Value Unit 2.0 K/W 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 100 - - 100 nA 1 205 250 Rev. 2_3 Jan 07 ...
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... reverse recovery. =150 C j Symbol Conditions Energy losses include t s “tail” and diode reverse recovery. 3 SGB02N120 Value Unit min. typ. max 260 340 - 0.16 0. 0.06 0.08 - 0.22 0.29 Value Unit min. typ. max 290 350 - 85 102 - 0 ...
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... I c 10A 1A 0.1A 0.01A 1V 10kHz 100kHz V Figure 2. Safe operating area ( 25°C 100°C 125°C Figure 4. Collector current as a function of case temperature ( SGB02N120 150 s 500 s 20ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE C ...
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... Power Semiconductors Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB02N120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE =1A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev. 2_3 Jan 07 7V ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig. 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SGB02N120 t d(off d(on 100 150 R , GATE RESISTOR G = 150 +15V/0V 2A max. typ. min. 0°C 50° ...
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... Fig K K/W E off -2 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SGB02N120 *) E and E include losses on ts due to diode recovery. 50 100 150 R , GATE RESISTOR G = 150 +15V/0V 2A D=0.5 0.2 0 0.05 0.66735 0.04691 ...
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... V Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 40A 30A 20A 10A 0A 14V 15V 10V Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V V 8 SGB02N120 10V 20V 30V , - COLLECTOR EMITTER VOLTAGE 1MHz) 12V 14V 16V 18V GATE ...
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... Power Semiconductors PG-TO263-3-2 9 SGB02N120 Rev. 2_3 Jan 07 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGB02N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2_3 Jan 07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGB02N120 11 Rev. 2_3 Jan 07 ...