GT15Q102(Q) Toshiba, GT15Q102(Q) Datasheet - Page 5

• Manufacturer Part Number: GT15Q102(Q)
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Toshiba

Specifications of GT15Q102(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current Ic Max: 15 A
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

3000
1000
10
10
10
10
300
100
100
10
10
10
10
0.5
0.3
0.1
30
10
50
30
10
− 1
− 2
− 3
− 4
5
3
1
3
2
1
0
10
1
1
− 5
I C max (pulsed)*
I C max (continuous)
*: Single
Curves must be
derated linearly with
increase in
temperature.
Common emitter
V GE = 0
f = 1 MHz
Tc = 25°C
nonrepetitive pulse
Tc = 25°C
Tc = 25°C
10
3
− 4
Collector-emitter voltage V
Collector-emitter voltage V
3
operation
DC
10
10
Safe operating area
− 3
Pulse width t
10
R
10
30
C – V
th (t)
− 2
30
10
– t
CE
100
− 1
w
w
100 μs*
100
(s)
1 ms*
10
300
CE
CE
0
10 ms*
300
(V)
(V)
50 μs*
1000
10
1
C oes
C ies
C res
1000
3000
10
2
5
1000
800
600
400
200
0.5
0.3
0.1
50
30
10
0
5
3
1
0
1
Common emitter
R L = 40 Ω
Tc = 25°C
T j < = 125°C
V GE = ±15 V
R G = 56 Ω
600
3
V CE = 200 V
Collector-emitter voltage V
40
400
Gate charge Q
10
Reverse bias SOA
V
CE
80
30
, V
GE
100
– Q
120
G
G
(nC)
300
CE
160
(V)
1000
GT15Q102
2006-11-01
3000
200
20
16
12
8
4
0