GT15Q102(Q) Toshiba, GT15Q102(Q) Datasheet - Page 4

• Manufacturer Part Number: GT15Q102(Q)
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Toshiba

Specifications of GT15Q102(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current Ic Max: 15 A
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
3
3
3
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 15 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 15 A
Common emitter
V CC = 600 V
V GG = ±15 V
I C = 15 A
Note2
5
5
5
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
Switching time t
Switching time t
10
10
10
Gate resistance R
Gate resistance R
Gate resistance R
30
30
30
50
50
50
on
on
off
, E
G
G
G
, t
, t
100
100
100
r
f
off
– R
– R
(Ω)
(Ω)
(Ω)
– R
G
G
G
t on
t off
t r
t f
E on
E off
300 500
300
300 500
4
0.05
0.03
0.01
0.05
0.5
0.3
0.1
0.5
0.3
0.1
0.5
0.3
0.1
10
1
5
3
1
3
1
0
0
0
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 56 Ω
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 56 Ω
Note2
Common emitter
V CC = 600 V
V GG = ±15 V
R G = 56 Ω
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
Switching loss E
: Tc = 25°C
: Tc = 125°C
Switching time t
Switching time t
5
5
5
Collector current I
Collector current I
Collector current I
E on
10
10
10
E off
on
on
off
, E
C
C
C
, t
, t
r
f
off
(A)
(A)
(A)
– I
– I
15
15
15
– I
C
C
t on
C
t r
t off
GT15Q102
t f
2006-11-01
20
20
20