GT15Q102(Q) Toshiba, GT15Q102(Q) Datasheet - Page 3

• Manufacturer Part Number: GT15Q102(Q)
• Description: IGBT 1200V 15A TO-3PN
• Manufacturer: Toshiba

Specifications of GT15Q102(Q)

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 15A
• Current - Collector (ic) (max): 15A
• Power - Max: 170W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current Ic Max: 15 A
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

50
40
30
20
10
20
16
12
50
40
30
20
10
0
8
4
0
0
0
0
0
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
Tc = 125°C
I C = 6 A
V
8
2
8
I
I
CE
C
C
25
– V
– V
– V
20
CE
GE
GE
15
12
12
−40
3
15
30
GE
GE
Common emitter
Tc = 25°C
CE
(V)
(V)
16
V GE = 9 V
16
4
(V)
10
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common emitter
V GE = 15 V
Common emitter
Tc = 125°C
Common emitter
Tc = −40°C
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
I C = 6 A
I C = 6 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
15
GE
– Tc
GE
12
12
60
30
GE
GE
30
15
(V)
(V)
I C = 6 A
100
16
16
GT15Q102
30
15
2006-11-01
140
20
20