GT15Q102(Q) Toshiba, GT15Q102(Q) Datasheet

GT15Q102(Q)

Manufacturer Part Number

GT15Q102(Q)

Description

IGBT 1200V 15A TO-3PN

Manufacturer

Toshiba

Datasheet

1.GT15Q102Q.pdf (6 pages)

Specifications of GT15Q102(Q)

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

2.7V @ 15V, 15A

Current - Collector (ic) (max)

15A

Power - Max

170W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

Configuration

Single

Collector- Emitter Voltage Vceo Max

1200 V

Maximum Gate Emitter Voltage

20 V

Continuous Collector Current Ic Max

15 A

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Igbt Type

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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High Power Switching Applications

•

Absolute Maximum Ratings

Marking

Third-generation IGBT

Enhancement mode type

High speed: t

Low saturation voltage: V

Collector-emitter voltage

Gate-emitter voltage

Collector current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristic

GT15Q102

TOSHIBA

= 0.32 μs (max)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

1 ms

CE (sat)

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

= 2.7 V (max)

(Ta = 25°C)

Symbol

GT15Q102

GES

CES

stg

−55~150

Rating

1200

±20

170

150

Unit

°C

Weight: 4.6 g

JEDEC

JEITA

TOSHIBA

2-16C1C

GT15Q102

2006-11-01

―

Unit: mm

Related parts for GT15Q102(Q)

GT15Q102(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Electrical Characteristics Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance Note1: Switching time measurement circuit and input/output waveforms GT15Q301 −V GE ...

Page 3

I – Common emitter Tc = 25° Collector-emitter voltage V ( – Common ...

Page 4

Switching time – Common emitter 600 ± 25°C 0 125°C 0.1 0.05 ...

Page 5

C – 3000 1000 300 100 Common emitter MHz Tc = 25° 100 Collector-emitter voltage V CE Safe operating area 100 max ...

Page 6

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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