IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet - Page 5

• Manufacturer Part Number: IRG7PSH73K10PBF
• Description: IGBT N-CH 1200V 220A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG7PSH73K10PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector (ic) (max): 220A
• Power - Max: 1150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super 247
• Transistor Type: IGBT
• Dc Collector Current: 220A
• Collector Emitter Voltage Vces: 2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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T
T
J
J
= 175°C; L = 200μH; V
= 175°C; L = 200μH; V
10000
1000
1000
100
400
300
200
100
100
Fig. 12- Typ. Transfer Characteristics
10
Fig. 16 - Typ. Switching Time vs. R
10
0
Fig. 14 - Typ. Switching Time vs. I
20
0
4
t F
td OFF
t R
td ON
t R
td ON
V
40
V GE , Gate-to-Emitter Voltage (V)
6
CE
10
= 50V; tp = 10μs
T J = 175°C
60
CE
T J = 25°C
CE
8
= 600V, R
20
= 600V, I
80
R G (Ω)
I C (A)
10
100
30
G
12
CE
= 5.0Ω; V
120
= 75A; V
40
C
14
td OFF
140
G
t F
GE
GE
160
16
50
= 15V
= 15V
T
J
T
= 175°C; L = 200μH; V
J
= 175°C; L = 200μH; V
25000
20000
15000
10000
40000
30000
20000
10000
5000
Fig. 13 - Typ. Energy Loss vs. I
40
35
30
25
20
15
10
5
Fig. 17 - V
0
0
Fig. 15 - Typ. Energy Loss vs. R
40
0
8
V
IRG7PSH73K10PbF
CC
60
10
10
= 600V; T
CE
GE
= 600V, R
T sc
vs. Short Circuit Time
CE
80
12
= 600V, I
20
V GE (V)
R G (Ω)
I C (A)
C
100
= 150°C
G
14
= 5.0Ω; V
30
E ON
CE
120
C
I sc
E ON
= 75A; V
16
E OFF
40
140
GE
G
E OFF
= 15V
GE
18
160
50
= 15V
450
400
350
300
250
200
150
100
5