IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet - Page 2

• Manufacturer Part Number: IRG7PSH73K10PBF
• Description: IGBT N-CH 1200V 220A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG7PSH73K10PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector (ic) (max): 220A
• Power - Max: 1150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super 247
• Transistor Type: IGBT
• Dc Collector Current: 220A
• Collector Emitter Voltage Vces: 2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRG7PSH73K10PbF
Notes:

‚
ƒ
„
…
Electrical Characteristics @ T
V
ΔV
V
V
ΔV
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
V
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V
R
(BR)CES
GE(th)
2
CC
θ
is measured at T
= 80% (V
/ΔTJ
/ΔT
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 20μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 5.0Ω.
(BR)CES
safely.
Min.
1200
Min.
5.0
10
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ.
2340
Typ.
9450
1.58
2.50
2.60
12.3
18.4
360
180
118
267
114
110
330
237
340
230
2.0
-18
1.0
7.7
4.6
7.4
—
53
87
63
11
62
—
—
—
Max. Units
Max. Units
±400
14.3
540
130
270
138
291
134
2.3
7.5
8.7
5.6
25
81
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—
mV/°C V
V/°C V
mJ
mJ
μA
nA
nC
ns
ns
pF
μs
V
V
V
S
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
R
T
V
V
f = 1.0Mhz
V
Rg = 4.7Ω, V
V
Rg = 4.7Ω, V
I
C
C
C
C
C
C
C
C
I
J
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
CC
CC
CC
G
G
G
G
= 75A, V
= 75A, V
= 75A, V
= 75A
= 75A, V
= 75A, V
= 75A, V
= 75A, V
=4.7Ω, L=200μH, T
= 175°C
= 300A
= 4.7Ω, L = 200μH, T
= 4.7Ω, L = 200μH, T
= 4.7Ω, L = 200μH
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
= 600V, Vp =1200V ,T
Conditions
GE
GE
e
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 250μA
= 5.0mA (25°C-175°C)
GE
GE
= 3.5mA
= 3.5mA (25°C - 175°C)
= 15V, T
= 15V, T
= 15V, T
= 75A, PW = 80μs
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 1200V, T
= 1200V, T
= +20V to 0V, T
= +15V to 0V
J
Conditions
J
J
J
= 175°C
GE
GE
GE
GE
= 25°C
= 150°C
= 175°C
J
J
J
J
= 25°C
= 25°C
=15V
=15V
= 15V
= 15V
J
= 25°C
= 175°C
= 150°C
Ãe
e
J
e
Ãe
e
e
=175°C
e
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