IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet - Page 3

• Manufacturer Part Number: IRG7PSH73K10PBF
• Description: IGBT N-CH 1200V 220A SUPER-247
• Manufacturer: International Rectifier

Specifications of IRG7PSH73K10PBF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 75A
• Current - Collector (ic) (max): 220A
• Power - Max: 1150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: Super 247
• Transistor Type: IGBT
• Dc Collector Current: 220A
• Collector Emitter Voltage Vces: 2V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-247AA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 2 - Maximum DC Collector Current vs.
1000
100
100
240
200
160
120
0.1
10
80
60
40
20
80
40
0
1
0
T
0.1
25
1
C
= 25°C, T
Square wave:
Fig. 4 - Forward SOA
Case Temperature
50
60% of rated
T C , Case Temperature (°C)
Ideal diodes
10
I
voltage
J
75
≤
175°C; V
V CE (V)
100
100
Fig. 1 - Typical Load Current vs. Frequency
125
GE
1000
=15V
10 μs
100 μs
150
1ms
1
DC
10000
175
f , Frequency ( kHz )
1000
1200
1000
100
800
600
400
200
10
10
Fig. 3 - Power Dissipation vs. Case
1
0
10
0
Fig. 5 - Reverse Bias SOA
IRG7PSH73K10PbF
T
25
J
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 164W
= 175°C; V
Temperature
50
100
V CE (V)
75
T C (°C)
GE
100
=20V
1000
125
100
150
10000
175
3