IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet

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IRG7PSH73K10PBF

Manufacturer Part Number
IRG7PSH73K10PBF
Description
IGBT N-CH 1200V 220A SUPER-247
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7PSH73K10PBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 75A
Current - Collector (ic) (max)
220A
Power - Max
1150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super 247
Transistor Type
IGBT
Dc Collector Current
220A
Collector Emitter Voltage Vces
2V
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-247AA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7PSH73K10PBF
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
IRG7PSH73K10PBF
Manufacturer:
IR
Quantity:
20 000
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
1
Features
• Low V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 μS short Circuit SOA
• Square RBSOA
• 100% of The Parts Tested for I
• Positive V
• Tight Parameter Distribution
• Lead Free Package
Absolute Maximum Ratings
V
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
C
C
NOMINAL
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching Losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature Coefficient
LM
GE
=15V
Parameter
Parameter
GE
=20V
d
g
g
G
G a te
n-channel
G
IRG7PSH73K10PbF
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
E
C
C
10 lbf·in (1.1 N·m)
C o lle c to r
Super-247
-55 to +175
Max.
220
C
1200
1150
Typ.
0.24
130
225
300
±30
580
–––
75
40
t
SC
G
C
V
E
CE(on)
I
C(Nominal)
V
10μs, T
CES
Max.
0.13
–––
–––
typ. = 2.0V
= 1200V
J(max)
E m itte r
www.irf.com
PD -
= 75A
9/8/10
E
=175°C
Units
Units
°C/W
°C
W
V
A
V

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IRG7PSH73K10PBF Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw Thermal Resistance R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA 1 IRG7PSH73K10PbF G n-channel Parameter =15V GE d =20V GE Parameter ...

Page 2

... IRG7PSH73K10PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔTJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... C J www.irf.com Frequency ( kHz ) 1200 1000 125 150 175 1000 10 μs 100 100 μs 1ms DC 1000 10000 =15V GE IRG7PSH73K10PbF For both: Duty cycle : 50 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 164W 10 100 800 600 400 200 100 125 150 T C (° ...

Page 4

... IRG7PSH73K10PbF 400 300 200 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J 400 300 200 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 80μ (V) Fig Typical 25° 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8 ...

Page 5

... T = 175° 200μ 120 140 160 C = 5.0Ω 15V T = 175° 200μ OFF 75A 15V CE GE IRG7PSH73K10PbF 40000 E ON 30000 20000 E OFF 10000 100 120 I C (A) Fig Typ. Energy Loss vs 600V 5.0Ω 25000 E ON 20000 15000 10000 5000 ...

Page 6

... IRG7PSH73K10PbF 100000 10000 Cies 1000 Coes Cres 100 (V) Fig Typ. Capacitance vs 0V 1MHz 0.50 0.20 0.10 0.01 0.05 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case 100 τ J τ J τ 1 τ 1 Ci= τi/Ri Ci τ ...

Page 7

... Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com VCC DUT DIODE CLAMP V CC VCC ICM VCC G f orce IRG7PSH73K10PbF L + DUT - Vclamped Rg Fig.C.T.2 - RBSOA Circuit L DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C f orce 100K D1 22K 0.0075μ ...

Page 8

... IRG7PSH73K10PbF 900 tf 800 700 600 90 500 400 300 10 200 100 0 Eoff Loss -100 - time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 180 160 140 120 100 10 - Fig. WF2 - Typ. Turn-on Loss Waveform 800 700 VCE 600 500 ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 09/10 IRG7PSH73K10PbF PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 ...

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