IRG7PSH73K10PBF International Rectifier, IRG7PSH73K10PBF Datasheet
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
IRG7PSH73K10PBF
Specifications of IRG7PSH73K10PBF
Available stocks
Related parts for IRG7PSH73K10PBF
IRG7PSH73K10PBF Summary of contents
Page 1
... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw Thermal Resistance R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA 1 IRG7PSH73K10PbF G n-channel Parameter =15V GE d =20V GE Parameter ...
Page 2
... IRG7PSH73K10PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔTJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...
Page 3
... C J www.irf.com Frequency ( kHz ) 1200 1000 125 150 175 1000 10 μs 100 100 μs 1ms DC 1000 10000 =15V GE IRG7PSH73K10PbF For both: Duty cycle : 50 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 164W 10 100 800 600 400 200 100 125 150 T C (° ...
Page 4
... IRG7PSH73K10PbF 400 300 200 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 80μs J 400 300 200 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 80μ (V) Fig Typical 25° 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8 ...
Page 5
... T = 175° 200μ 120 140 160 C = 5.0Ω 15V T = 175° 200μ OFF 75A 15V CE GE IRG7PSH73K10PbF 40000 E ON 30000 20000 E OFF 10000 100 120 I C (A) Fig Typ. Energy Loss vs 600V 5.0Ω 25000 E ON 20000 15000 10000 5000 ...
Page 6
... IRG7PSH73K10PbF 100000 10000 Cies 1000 Coes Cres 100 (V) Fig Typ. Capacitance vs 0V 1MHz 0.50 0.20 0.10 0.01 0.05 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case 100 τ J τ J τ 1 τ 1 Ci= τi/Ri Ci τ ...
Page 7
... Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.3 - S.C. SOA Circuit R = DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com VCC DUT DIODE CLAMP V CC VCC ICM VCC G f orce IRG7PSH73K10PbF L + DUT - Vclamped Rg Fig.C.T.2 - RBSOA Circuit L DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C f orce 100K D1 22K 0.0075μ ...
Page 8
... IRG7PSH73K10PbF 900 tf 800 700 600 90 500 400 300 10 200 100 0 Eoff Loss -100 - time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 180 160 140 120 100 10 - Fig. WF2 - Typ. Turn-on Loss Waveform 800 700 VCE 600 500 ...
Page 9
... Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 09/10 IRG7PSH73K10PbF PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 ...