STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 7

• Manufacturer Part Number: STGW35NB60SD
• Description: MOSFET N-CHAN 35A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 1.7V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGW35NB60SD
Figure 7.
Figure 9.
Figure 11. Switching Losses vs Temperature
Normalized Breakdown Voltage vs
Temperature
Capacitance Variations
Figure 8.
Figure 10. Switching Losses vs Gate Charge
Figure 12. Switching Losses vs Collector
Gate Charge vs Gate-Emitter
Voltage
Current
2 Electrical characteristics
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