STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 3

• Manufacturer Part Number: STGW35NB60SD
• Description: MOSFET N-CHAN 35A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW35NB60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 20A
• Current - Collector (ic) (max): 70A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 70A
• Collector Emitter Voltage Vces: 1.7V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

STGW35NB60SD
2
Table 3.
Table 4.
V
V
Symbol
Symbol
V
BR(CES)
CE(SAT)
C
I
I
C
C
GE(th)
Q
Q
CES
GES
Q
I
g
CL
oes
res
ies
fs
ge
gc
g
Electrical characteristics
(T
CASE
Static
Dynamic
Collectro-Emitter Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Gate Threshold Voltage
Collector-Emitter Leakage
Current (V
Gate-Emitter Leakage
Current (V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
= 25 °C unless otherwise specified)
Parameter
Parameter
GE
CE
= 0)
= 0)
I
V
V
V
V
V
V
V
V
V
V
(see Figure 17)
V
R
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
GE
clamp
G
= 1mA, V
= 100
= V
= 15V, I
= 15V, I
= Max Rating,Tc=25°C
= Max Rating, Tc=125°C
= 10V
= 25V, f = 1 MHz, V
= 480V, I
= ± 20V , V
= 15V,
= 480V Tj = 125°C
Test Conditions
Test Conditions
GE
, I
,
I
C
C
GE
C
C
= 20A, Tj= 25°C
= 20A, Tj= 125°C
= 250µA
= 18A
C
= 0
= 20A,
CE
= 0
GE
= 0
Min.
Min.
600
2.5
80
2 Electrical characteristics
1820
Typ.
1.25
Typ.
167
1.2
20
27
83
10
27
± 100
Max.
Max.
100
1.7
115
10
5
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
A
V
V
V
V
S
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