STGW35NB60SD STMicroelectronics, STGW35NB60SD Datasheet - Page 11
![MOSFET N-CHAN 35A 600V TO-247](/photos/5/30/53058/to-247_sml.jpg)
STGW35NB60SD
Manufacturer Part Number
STGW35NB60SD
Description
MOSFET N-CHAN 35A 600V TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet
1.STGW35NB60S.pdf
(13 pages)
Specifications of STGW35NB60SD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 20A
Current - Collector (ic) (max)
70A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
70A
Collector Emitter Voltage Vces
1.7V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGW35NB60SD
Manufacturer:
ST
Quantity:
12 500
STGW35NB60SD
DIM.
øP
øR
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
19.85
15.45
14.20
4.85
2.20
0.40
3.70
3.55
4.50
MIN.
1.0
2.0
3.0
TO-247 MECHANICAL DATA
18.50
5.45
5.50
mm.
TYP
20.15
15.75
14.80
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.140
0.177
0.19
0.14
MIN.
0.214
0.728
0.216
TYP.
inch
4 Package mechanical data
0.102
0.094
0.134
0.793
0.620
0.582
0.143
0.216
0.055
MAX.
0.20
0.03
0.17
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