IRG4IBC20UDPBF International Rectifier, IRG4IBC20UDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4IBC20UDPBF
• Description: IGBT W/DIODE 600V 11.4A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Current - Collector (ic) (max): 11.4A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4IBC20UDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
0.32
0.31
0.30
0.29
1000
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
1
V
V
T
I
CC
GE
J
C
Collector-to-Emitter Voltage
V
CE
C
= 6.5A
C
= 480V
= 15V
= 25°C
C
10
ies
oes
res
, Collector-to-Emitter Voltage (V)
R , Gate Resistance ( Ω)
G
V
C
C
C
Resistance
GE
ies
res
oes
20
= 0V,
= C
= C
= C
ge
ce
gc
30
+ C
+ C
10
gc
gc
f = 1MHz
, C
40
ce
SHORTED
50
100
60
A
A
0.1
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
G
GE
CC
CE
C
-40
= 6.5A
= 15V
= 480V
= 50 Ω
= 400V
Gate-to-Emitter Voltage
-20
5
Junction Temperature
Q , Total Gate Charge (nC)
T , Junction Temperature (°C)
J
g
0
10
20
40
15
60
80
20
100 120 140 160
I = 13A
I = 6.5A
I
C
C
C
25
= 3.3A
5
30
A
A