IRG4IBC20UDPBF International Rectifier, IRG4IBC20UDPBF Datasheet
IRG4IBC20UDPBF
Specifications of IRG4IBC20UDPBF
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IRG4IBC20UDPBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC20UDPbF G TM ultrafast, n-channel TM 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) PD -94917 UltraFast CoPack IGBT ...
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... IRG4IBC20UDPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ∆ ∆ GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 T = 150° 15V 0 Fig Typical Transfer Characteristics A IRG4IBC20UDPbF For both: Duty cycle: 50 125° 90°C sink Gate drive as specified 9.5 Power Dissipation = 150° 25° 10V CC 5µ ...
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... IRG4IBC20UDPbF 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V GE 80µs PULSE WIDTH 2.2 1.8 1 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 0 -60 -40 Fig Typical Switching Losses vs. IRG4IBC20UDPbF = 400V = 6. Total Gate Charge (nC) g Gate-to-Emitter Voltage = 50 Ω = 15V = 480V I = 13A 6. 3. 100 120 140 160 T , Junction Temperature (°C) J Junction Temperature ...
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... IRG4IBC20UDPbF 1 Ω 150° 480V 15V GE 0.9 0.6 0.3 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 10 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 SAFE OPERATING AREA A 0 150° 125° 25° 0.4 0.8 1.2 1 ...
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... Fig Typical Stored Charge vs. di www.irf.com 100 I = 16A 8. 1000 100 Fig Typical Recovery Current vs. di /dt f 10000 V = 200V T = 125° 25°C 1000 I = 4.0A F 100 1000 100 /dt Fig Typical di f IRG4IBC20UDPbF V = 200V 125° 25° 16A 8. 4. /dt - (A/µ 16A F di /dt - (A/µs) f /dt vs. di ...
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... IRG4IBC20UDPbF Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 90% D.U.T. 10 d(on d(off) f Fig. 18b - Test Waveforms for Circuit of Fig ...
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... Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4IBC20UDPbF Test Circuit 480V @25°C C Test Circuit 9 ...
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... IRG4IBC20UDPbF Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot 60s 60Hz TO-220 Full-Pak Package Outline TO-220 Full-Pak Part Marking Information ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...