IRG4IBC20UDPBF International Rectifier, IRG4IBC20UDPBF Datasheet
IRG4IBC20UDPBF
Specifications of IRG4IBC20UDPBF
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IRG4IBC20UDPBF Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4IBC20UDPbF G TM ultrafast, n-channel TM 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) PD -94917A UltraFast CoPack IGBT ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ∆ ...
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Square wave: 60% of rated voltage 4.0 I 2.0 Ideal diodes 0.0 0.1 Fig Typical Load Current vs. Frequency 100 T = 25° 20µs PULSE WIDTH 0.1 0 ...
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T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ...
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1MHz ies res oes ce gc 800 C ies 600 C oes 400 C res ...
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150° 480V 15V GE 0.9 0.6 0.3 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses ...
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V = 200V 125° 25° 4. 100 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di 500 V = 200V ...
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Same type device as D.U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. ...
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Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
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TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. Notes: Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20) GE ...