IRG4IBC20UDPBF International Rectifier, IRG4IBC20UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4IBC20UDPBF
• Description: IGBT W/DIODE 600V 11.4A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Current - Collector (ic) (max): 11.4A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4IBC20UDPBF

Electrical Characteristics @ T
Switching Characteristics @ T
V
∆V
V
V
∆
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
E
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/
∆
/∆T
T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown Voltageƒ 600
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
„
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.69 –––
––– 1.85
––– 2.27
––– 1.87
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.16
––– 0.13
–––
–––
–––
–––
––– 0.49
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.29
3.0
1.4
–––
–––
–––
––– 1700
––– ±100
110
100
220
530
124
240
210
-11
4.3
1.4
1.3
4.5
7.5
7.4
3.5
4.5
27
10
39
15
93
38
17
39
37
55
65
–––
–––
–––
––– mV/°C V
–––
250
–––
–––
140
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
138
360
–––
–––
2.1
6.0
1.7
1.6
6.8
0.3
5.0
8.0
41
16
55
90
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 6.5A, T
= 8.0A, T
= 6.5A, V
= 6.5A, V
= 6.5A
= 13A
= 8.0A
= 6.5A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
C
J
J
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
Conditions
= 250µA
See Fig.
See Fig.
= 1.0mA
= 150°C
= 150°C
G
G
C
= 250µA
= 250µA
= 600V
= 600V, T
= 480V
See Fig. 9, 10, 11, 18
= 480V
= 6.5A
= 50Ω
= 50Ω
15
14
17
16
See Fig. 8
See Fig. 7
www.irf.com
V
See Fig. 2, 5
See Fig. 13
I
di/dt 200A/µs
F
J
GE
= 150°C
= 8.0A
V
R
= 15V
= 200V