APT30GN60BDQ2G Microsemi Power Products Group, APT30GN60BDQ2G Datasheet - Page 3

• Manufacturer Part Number: APT30GN60BDQ2G
• Description: IGBT 600V 63A 203W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT30GN60BDQ2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 203W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.30
1.20
1.10
1.00
3.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
T
T
T
GE
J
TEST<0.5 % DUTY
J
J
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 125°C
= 25°C
= 175°C
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
GE
= 15V
T
9
T
J
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
, GATE-TO-EMITTER VOLTAGE (V)
I
= -55°C
C
1
3
0
= 15A
10
T
25
J
T
11
= 175°C
T
J
T
6
2
J
= 125°C
J
50
= -55°C
I
= 25°C
C
12
= 30A
75 100 125 150 175
9
3
13
<0.5 % DUTY CYCLE
250µs PULSE TEST
T
14
J
= 25°C.
12
4
I
C
J
15
= 25°C)
= 60A
16
15
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
16
14
12
10
90
80
70
60
50
40
30
20
10
0
FIGURE 2, Output Characteristics (T
8
6
4
2
0
0
0
-50 -25
V
0
0 20 40 60 80 100 120 140 160 180 200
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 30A
25
V
2
GE
T
T
15V
C
J
= 15V.
0
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
V
V
50
CE
CE
GATE CHARGE (nC)
25
4
13V
I
I
= 120V
= 300V
I
C
C
C
12V
= 60A
= 30A
= 15A
75
50
6
11V
100
75 100 125 150 175
APT30GN60BD_SDQ2(G)
8
10V
125
V
CE
9V
10
= 480V
J
150
8V
= 125°C)
7V
175
12