APT30GN60BDQ2G Microsemi Power Products Group, APT30GN60BDQ2G Datasheet

IGBT 600V 63A 203W TO247

APT30GN60BDQ2G

Manufacturer Part Number
APT30GN60BDQ2G
Description
IGBT 600V 63A 203W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT30GN60BDQ2G.pdf (9 pages)

Specifications of APT30GN60BDQ2G

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
63A
Power - Max
203W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
600V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coeffi cient. Low gate charge simplifi es gate drive
1
(V
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 600V, V
= 600V, V
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
, I
= ±20V)
C
GE
= 430µA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 30A, T
= 30A, T
C
APT30GN60BDQ2(G)
j
j
j
= 2mA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
APT30GN60BDQ2
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specifi ed.
APT30GN60BD_SDQ2(G)
G
MIN
600
C
5.0
1.1
E
(B)
90A @ 600V
APT30GN60SDQ2(G)
APT30GN60BD_SDQ2(G)
-55 to 175
TYP
600
±30
203
300
N/A
APT30GN60SDQ2
5.8
1.5
1.7
63
37
90
G
G
MAX
TBD
D
300
C
6.5
1.9
50
3
PAK
E
(S)
600V
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT30GN60BDQ2G Summary of contents

Page 1

TYPICAL PERFORMANCE CURVES Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight ...

Page 2

DYNAMIC CHARACTERISTICS DYNAMIC CHARACTERISTICS Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller") Charge gc Switching ...

Page 3

TYPICAL PERFORMANCE CURVES 15V -55° 25° 125° 175° COLLECTER-TO-EMITTER ...

Page 4

V = 15V 400V 25°C or =125° 4.3Ω 100µ COLLECTOR ...

Page 5

TYPICAL PERFORMANCE CURVES 3,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.80 0. 0.9 0.60 0.7 0.50 0.5 0.40 0.30 0.3 0.20 0.1 0.10 ...

Page 6

APT40DQ60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions 10% t ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current ( RMS Forward Current (Square wave, 50% duty RMS I Non-Repetitive Forward ...

Page 8

T = 125° 175° 25° -55° 0 ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, ...

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