APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 5

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature(°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
5000
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
500
100
V
50
10
CE
0
Junction
temp (°C)
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
0.0683
0.0822
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
0es
res
0.0217
0.256
50
10
SINGLE PULSE
-3
187
100
Figure 20, Operating Frequency vs Collector Current
50
10
10
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
300
250
200
150
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
-2
50
30
0
°
°
I
C
C
C
0
V
, COLLECTOR CURRENT (A)
CE
100
50
, COLLECTOR TO EMITTER VOLTAGE
200
70
Note:
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
90
-1
400
t 1
110
t 2
500
APT65GP60L2DQ2
t 1
130
/
t 2
600
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f