APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 4

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
10
I
0
CE
5
5
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 5Ω
= 400V
=
25
25
25
R
5Ω, L
G
10
, GATE RESISTANCE (OHMS)
,
T
J
45
45
45
=
=125°C
100
T
J
µ
20
H, V
=
65
65
65
25 or 125°C,V
V
CE
GE
=
85
85
85
= 15V
30
400V
105
105
105
GE
=
40
15V
125
125
125 145
145
145
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
4000
3000
2000
1000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
140
120
100
140
120
100
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
80
60
40
20
0
0
0
0
I
I
CE
CE
I
0
5
5
5
CE
V
V
R
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
G
G
= 5Ω
GE
=
= 400V
T
= +15V
=
=
25
25
25
J
5Ω
=15V,T
5Ω, L
, JUNCTION TEMPERATURE (°C)
400V
25
45
45
45
=
J
=125°C
100
µ
50
H, V
65
65
65
V
GE
CE
=15V,T
=
85
85
85
400V
75
J
=25°C
105
105
105
100
125
145
125
145
145
165
125