STGW38IH130D STMicroelectronics, STGW38IH130D Datasheet - Page 9

• Manufacturer Part Number: STGW38IH130D
• Description: IGBT 1300V 63A 250W TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW38IH130D

• Voltage - Collector Emitter Breakdown (max): 1300V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 63A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 1.3kV
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 55 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10001-5

STGW38IH130D
3
Figure 15. Test circuit for inductive load
Figure 17. Switching waveform
V
CE
V
G
I
C
Test circuits
switching
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tcross
Tr(Voff)
Tf
90%
10%
90%
10%
Doc ID 15697 Rev 2
AM01504v1
AM01506v1
90%
10%
Figure 16. Gate charge test circuit
Test circuits
AM01505v1
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