STGW38IH130D STMicroelectronics, STGW38IH130D Datasheet - Page 4

IGBT 1300V 63A 250W TO247

STGW38IH130D

Manufacturer Part Number
STGW38IH130D
Description
IGBT 1300V 63A 250W TO247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW38IH130D

Voltage - Collector Emitter Breakdown (max)
1300V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 20A
Current - Collector (ic) (max)
63A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Transistor Type
IGBT
Dc Collector Current
63A
Collector Emitter Voltage Vces
1.3kV
Power Dissipation Pd
250W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Configuration
Single
Collector- Emitter Voltage Vceo Max
1300 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
+/- 25 V
Continuous Collector Current At 25 C
55 A
Gate-emitter Leakage Current
+/- 100 nA
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10001-5

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Quantity
Price
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STGW38IH130D
Manufacturer:
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Quantity:
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Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
g
CE(sat)
I
I
= 25 °C unless otherwise specified)
C
GE(th)
C
C
Q
Q
CES
GES
fs
V
Q
oes
ies
res
ge
gc
F
(1)
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Diode forward voltage
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 15697 Rev 2
I
V
V
V
V
V
V
I
I
V
V
I
C
F
F
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
= 20 A,V
= 20 A
= 20 A, T
= 1 mA
= V
= 15 V, I
= 15 V, I
=1300 V
=1300 V, T
=± 20 V
= 25 V
= 25 V, f = 1 MHz, V
= 960 V,
Test conditions
GE
Test conditions
, I
GE
,
J
C
I
C
C
C
= 125 °C
= 1 mA
= 20 A
= 20 A, T
=15 V
= 20 A
J
=125 °C
J
=125 °C
GE
=0
Min.
-
-
1300
Min. Typ. Max. Unit
3.75
2900
Typ. Max.
155
127
30
18
50
STGW38IH130D
2.1
2.0
1.3
20
5.75
100
-
-
2.8
1.9
1.7
10
1
±
Unit
nC
nC
nC
pF
pF
pF
mA
mA
nA
V
V
V
V
S
V
V

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