STGW38IH130D STMicroelectronics, STGW38IH130D Datasheet - Page 7

• Manufacturer Part Number: STGW38IH130D
• Description: IGBT 1300V 63A 250W TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW38IH130D

• Voltage - Collector Emitter Breakdown (max): 1300V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 63A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 1.3kV
• Power Dissipation Pd: 250W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1300 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Continuous Collector Current At 25 C: 55 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10001-5

STGW38IH130D
Figure 8.
Figure 10. Switching losses vs temperature
Figure 12. Switching losses vs collector
V
(norm)
GE(th)
1.05
0.95
0.85
0.75
1.1
0.8
1.0
0.9
0.7
-75
-50
Normalized gate threshold voltage
vs temperature
current
-25
0
I
C
25
=250µA
50
75
100 125 150 T
HV42610
Doc ID 15697 Rev 2
J
(°C)
Figure 9.
Figure 11. Switching losses vs gate resistance
Figure 13. RBSOA
100
0.1
(A)
V
10
I
C
CE(sat)
1
1.65
1.45
1.25
0.85
2.45
2.25
2.05
1.85
1.05
1
(V)
0
Collector-emitter on voltage vs
collector current
10
T
10
C
=125°C
T
C
20
=25°C
100
Electrical characteristics
30
1000
T
C
=-50°C
40
V
CE
HV42650
(V)
I
C
(A)
AM03937v1
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