IXSA20N60B2D1 IXYS, IXSA20N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXSA20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO263
• Manufacturer: IXYS

Specifications of IXSA20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
Z
I
0.001
Fig. 18. Forward current I
Fig. 21. Dynamic parameters Q
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
30
25
20
15
10
10
A
5
0
1
Fig. 24. Transient thermal resistance junction-to-case
NOTE: Fig. 18 to Fig. 23 shows typical values
0
0
T
VJ
T
= 100°C
VJ
40
= 150°C
1
I
RM
Q
r
0.0001
80
2
T
T
VJ
V
VJ
F
120
F
versus V
= 25°C
4,835,592
4,850,072
3
C
0.001
r
, I
160
V
RM
F
4,881,106
4,931,844
t
Q
rr
Fig. 22. Recovery time t
r
100
250
200
150
100
nC
Fig. 19. Reverse recovery charge Q
ns
80
60
40
50
0
5,034,796
100
5,017,508
0.01
0
I
I
I
T
V
F
F
F
VJ
R
= 5 A
= 10 A
= 20 A
200
= 300 V
= 100°C
T
V
5,049,961
5,063,307
VJ
R
= 300 V
= 100°C
400
0.1
-di
600
5,187,117
5,237,481
F
-di
/dt
rr
I
I
I
F
F
F
t
F
versus -di
/dt
= 5 A
= 10 A
= 20 A
A/μs
s
800
A/μs
DSEP 8-06B
5,486,715
5,381,025
1000
1000
1
F
/dt
r
6,162,665
6,259,123 B1 6,404,065 B1
I
V
RM
FR
Constants for Z
Fig. 23. Peak forward voltage V
10
60
40
20
A
V
1
2
8
6
4
2
0
Fig. 20. Peak reverse current I
0
i
0
0
T
I
V
F
VJ
FR
6,306,728 B1 6,534,343
= 10 A
= 100°C
200
200
R
1.449
0.5578
I
I
I
IXSA 20N60B2D1
IXSP 20N60B2D1
F
F
F
thi
= 5 A
= 10 A
= 20 A
400
400
thJC
(K/W)
6,583,505
calculation:
600
600
di
-di
T
V
F
VJ
R
/dt
F
/dt
= 300 V
= 100°C
A/μs
A/μs
800
800 1000
6,683,344
6,710,405B2
t
0.0052
0.0003
i
(s)
1000
t
fr
FR
RM
0.3
0.2
0.1
0.0
μs
and
t
fr