IXSA20N60B2D1 IXYS, IXSA20N60B2D1 Datasheet - Page 5

• Manufacturer Part Number: IXSA20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO263
• Manufacturer: IXYS

Specifications of IXSA20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1,000
300
280
260
240
220
200
180
160
140
120
100
100
0.50
1.00
0.10
80
10
25
0
1
t
t
R
V
V
Sw itching Tim e on Tem perature
d(off)
fi
35
Fig. 13. Dependence of Turn-off
GE
CE
G
f = 1 MHz
5
- - - - -
I
= 10Ω
C
= 15V
= 400V
45
= 16A
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
15
V
65
C E
I
C
20
- Volts
75
= 32A
I
C
= 32A
85
Fig. 17. Maxim um Transient Therm al Resistance
25
95
30
C
C
C
oes
res
105 115 125
10
I
ies
C
= 8A
35
Pulse Width - milliseconds
40
33
30
27
24
21
18
15
12
16
14
12
10
9
6
3
0
8
6
4
2
0
100
0
V
I
I
CE
C
G
T
R
dV/dT < 10V/ns
Fig. 16. Reverse-Bias Safe
J
= 16A
= 10mA
G
5
= 125
= 480V
200
= 10Ω
100
Fig. 14. Gate Charge
Operating Area
º
10
Q
C
G
300
V
- nanoCoulombs
C E
15
IXSA 20N60B2D1
IXSP 20N60B2D1
- Volts
20
400
25
500
30
1,000
600
35