IXSA20N60B2D1 IXYS, IXSA20N60B2D1 Datasheet
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Manufacturer Part Number
IXSA20N60B2D1
Description
IGBT HS W/DIODE 600V 35A TO263
Specifications of IXSA20N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 16A
Current - Collector (ic) (max)
35A
Power - Max
190W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
35
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
126
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.97
Rthjc, Max, Igbt, (k/w)
0.66
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXSA20N60B2D1
High Speed IGBT
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
© 2004 IXYS All rights reserved
Symbol
BV
V
I
I
V
C25
C110
F(110)
CM
SC
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
GE
CE
= 82 Ω, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 250 μA, V
= 750 μA, V
= V
= 0 V
= 0 V, V
= 16A, V
CES
J
CE
GE
= 125°C, R
GE
= 360 V, T
= ± 20 V
GE
CE
= 15 V
= V
= 0 V
GE
GE
= 1 MΩ
G
J
= 125°C
= 82Ω
T
J
(T
= 125 °C
IXSA 20N60B2D1
IXSP 20N60B2D1
J
= 25°C, unless otherwise specified)
min.
600
3.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
CM
= 32
± 20
± 30
190
600
600
150
300
260
35
20
11
60
CES
10
2
max.
± 100
0.6
2.5
6.5
85
μs
°C
°C
°C
°C
°C
mA
W
μA
nA
V
V
V
V
A
A
A
A
A
g
V
V
V
TO-220 (IXSP)
TO-220 (IXSA)
G = Gate
E = Emitter
Features
• International standard packages
• Guaranteed Short Circuit SOA
• Low V
• High current handling capability
• MOS Gate turn-on
• Fast fall time for switching speeds
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Welding
Advantages
• High power density
capability
- for low on-state conduction losses
- drive simplicity
up to 20 kHz
V
I
V
G
C25
CE(sat)
CES
CE(sat)
C
G
E
C
C = Collector
TAB = Collector
= 600 V
= 35 A
= 2.5 V
DS99181B(12/05)
C (TAB)
C (TAB)
Related parts for IXSA20N60B2D1
IXSA20N60B2D1 Summary of contents
... CES 750 μ GE(th CES CE CES ± GES 16A CE(sat © 2004 IXYS All rights reserved IXSA 20N60B2D1 IXSP 20N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ± 20 ± 82Ω 0.8 V CES = 125° 190 -55 ... +150 150 -55 ... +150 2 300 260 Characteristic Values (T = 25° ...
... V = 100 -di/dt = 100 A/μ thJC Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. 3.5 7.0 800 ...
Fig. 1. Output Characteristics º 17V GE 28 15V 0.5 1 1 Volts C E Fig. 3. Output Characteristics º @ 125 C ...
Fig. 7. Transconductance º - º º 4 125 Amperes C Fig. 9. Dependence of Turn-Off Energy Loss ...
Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 300 t d(off) 280 260 R = 10Ω 240 32A 15V 220 ...
... Fig. 24. Transient thermal resistance junction-to-case NOTE: Fig Fig. 23 shows typical values IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 250 T = 100° ...
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