IXSA20N60B2D1 IXYS, IXSA20N60B2D1 Datasheet - Page 3

• Manufacturer Part Number: IXSA20N60B2D1
• Description: IGBT HS W/DIODE 600V 35A TO263
• Manufacturer: IXYS

Specifications of IXSA20N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 16A
• Current - Collector (ic) (max): 35A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 35
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Igbt, (ns): 126
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.97
• Rthjc, Max, Igbt, (k/w): 0.66
• Package Style: TO-263 (D2 PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

32
28
24
20
16
12
32
28
24
20
16
12
8
4
0
8
4
0
8
7
6
5
4
3
2
1
0.5
0.5
9
Fig. 5. Collector-to-Em itter Voltage
10
1
Fig. 3. Output Characteristics
1
Fig. 1. Output Characteristics
vs. Gate-to-Em itter voltage
11
1.5
12
1.5
V
13
2
C E
V
V
V
V
@ 125
G E
GE
CE
GE
@ 25
2
14
- Volts
I
C
2.5
- Volts
= 17V
- Volts
= 17V
15V
= 32A
15V
15
16A
8A
2.5
º
º
C
C
16
3
3
17
T
3.5
J
13V
11V
9V
7V
13V
11V
= 25
9V
7V
18
3.5
º
4
C
19
4.5
20
4
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
-50
Fig. 2. Extended Output Characteristics
0
6
V
V
GE
Fig. 4. Dependence of V
GE
2
-25
7
Fig. 6. Input Adm ittance
= 17V
= 15V
4
8
0
T
J
6
9
- Degrees Centigrade
Tem perature
25
V
@ 25
15V
13V
11V
V
10
8
9V
G E
C E
IXSA 20N60B2D1
IXSP 20N60B2D1
I
I
I
10
- Volts
50
11
- Volts
C
C
C
º
C
= 32A
= 16A
= 8A
T
12
J
12
75
= 125
-40
25
14
CE(sat)
13
º
º
º
100
C
C
C
16
14
on
125
18
15
150
20
16