STGW40NC60KD STMicroelectronics, STGW40NC60KD Datasheet - Page 7

• Manufacturer Part Number: STGW40NC60KD
• Description: IGBT 40A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 70A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8441-5

STGW40NC60KD
2.1
Figure 2.
Figure 4.
Figure 6.
Gfs(S)
15
13
11
9
7
5
4
Output characteristics
Transconductance
Gate charge vs gate-source voltage Figure 7.
Electrical characteristics (curves)
6
8
10
12
14
T
J
=-50°C
16
T
T
J
J
=150°C
=25°C
18 I
HV43540
C
(A)
Figure 3.
Figure 5.
V
CE(sat)
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
(V)
-50
Transfer characteristics
Collector-emitter on voltage vs
temperature
Capacitance variations
0
Electrical characteristics
50
100
I
I
I
C
C
C
=30A
=10A
HV43550
=40A
T
J
(°C)
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