STGW40NC60KD STMicroelectronics, STGW40NC60KD Datasheet - Page 4

• Manufacturer Part Number: STGW40NC60KD
• Description: IGBT 40A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 70A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8441-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
CASE
V
(BR)CES
g
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
CES
GES
Q
fs
oes
ies
res
ge
gc
g
(1)
=25°C unless otherwise specified)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Collector cut-off current
(V
Gate threshold voltage
Gate-emitter cut-off
current (V
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
= 0)
= 0)
V
V
V
(see Figure 18)
I
V
V
T
V
V
V
V
V
C
GE
CE
CE
C
GE
GE
CE
CE
CE
GE
CE
= 1 mA
= 125 °C
= 15 V, I
= 15 V, I
= V
= ±20 V
= 25 V, f = 1 MHz, V
= 480 V, I
= 15 V
= 600 V
= 600 V, T
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
C
I
= 250 µA
= 30 A
= 30 A,
C
C
C
= 30 A
= 30 A,
= 125 °C
GE
= 0
Min. Typ. Max.
Min.
600
4.5
2870
STGW40NC60KD
69.5
295
135
69
27
Typ.
2.1
1.9
20
Max. Unit
±100
500
2.7
6.5
5
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S