STGW40NC60KD STMicroelectronics, STGW40NC60KD Datasheet - Page 6

• Manufacturer Part Number: STGW40NC60KD
• Description: IGBT 40A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 70A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 70 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-8441-5

Electrical characteristics
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Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
I
I
I
di/dt = 100 A/µs
(see Figure 20)
I
T
(see Figure 20)
F
F
F
F
C
= 30 A, T
= 30 A
= 30 A,V
= 30 A,V
=125 °C, di/dt = 100 A/µs
Test conditions
R
R
C
= 50 V,
= 50 V,
= 125 °C
Min.
Typ.
2.55
STGW40NC60KD
100
290
2.4
1.8
5.8
45
56
Max.
Unit
nC
nC
ns
ns
V
V
A
A