STGF14NC60KD STMicroelectronics, STGF14NC60KD Datasheet - Page 5

• Manufacturer Part Number: STGF14NC60KD
• Description: IGBT N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF14NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 11A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 11A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 28W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5115-5

STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
Eon
Eon
E
E
t
t
t
t
r
r
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
off
off
E
E
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
r
r
f
f
off
off
rr
rr
ts
ts
F
rr
rr
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 11424 Rev 7
I
I
I
di/dt = 100 A/µs
(see Figure 21)
I
T
di/dt = 100 A/µs
(see Figure 21)
F
F
F
F
V
R
(see Figure 18)
V
R
T
(see Figure 18)
V
R
(see Figure 18)
V
R
T
(see Figure 18)
V
R
(see Figure 18)
V
R
T
(see Figure 18)
j
= 125 °C,
= 7 A
= 7 A, T
= 7 A, V
= 7 A, V
j
j
j
CC
CC
cc
cc
CC
CC
G
G
GE
GE
G
G
= 125 °C
= 125 °C
= 125 °C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
Test conditions
= 390 V, I
= 390 V, I
= 10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
Test conditions
Test conditions
C
R
R
= 125 °C
= 40 V,
= 40 V,
GE
GE
GE
GE
C
C
GE
GE
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 7 A,
= 7 A,
= 7 A
= 7 A
= 7 A
= 7 A
= 15 V
= 15 V
Electrical characteristics
Min.
Min
Min
-
-
-
-
-
-
Typ.
1.8
1.3
2.1
3.2
Typ.
22.5
37
40
61
98
700
680
116
196
144
Typ.
155
237
131
370
501
8.5
9.5
22
60
75
24
82
Max
Max. Unit
2.1
Max
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
A
5/16