STGF14NC60KD STMicroelectronics, STGF14NC60KD Datasheet - Page 4

• Manufacturer Part Number: STGF14NC60KD
• Description: IGBT N-CH 600V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF14NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 7A
• Current - Collector (ic) (max): 11A
• Power - Max: 28W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 11A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 28W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5115-5

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
j
V
(BR)CES
g
=25 °C unless otherwise specified)
CE(sat)
C
I
I
C
C
GE(th)
Q
Q
GES
CES
Q
fs
oes
ies
res
ge
gc
g
(1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Collector-emitter breakdown
voltage (V
Gate-emitter leakage
current (V
Collector cut-off current
(V
Gate threshold voltage
Collector-emitter saturation
voltage
Forward transconductance
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
GE
= 0)
= 0)
Doc ID 11424 Rev 7
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
V
V
V
(see Figure 19)
I
V
V
V
V
V
V
V
C
GE
CE
CE
GE
CE
CE
CE
GE
GE
CE
= 1 mA
= ±20 V
= 600 V
= 600 V, T
= V
= 15 V, I
= 15 V, I
= 25 V, f = 1 MHz, V
= 390 V, I
= 15 V
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
C
I
= 250 µA
= 7 A
= 7 A, T
C
C
j
= 125 °C
= 7 A
= 7 A,
j
= 125 °C
GE
= 0
Min. Typ. Max.
Min.
600
-
-
4.5
15.5
34.4
16.4
760
8.1
86
Typ. Max. Unit
2.1
1.8
3.2
±100
150
-
-
6.5
2.5
1
Unit
nC
nC
nC
pF
pF
pF
mA
nA
µA
V
V
V
V
S