APT50GS60BRDQ2G Microsemi Power Products Group, APT50GS60BRDQ2G Datasheet - Page 5

• Manufacturer Part Number: APT50GS60BRDQ2G
• Description: IGBT 600V 93A 415W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GS60BRDQ2G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.15V @ 15V, 50A
• Current - Collector (ic) (max): 93A
• Power - Max: 415W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GS60BRDQ2GMI; APT50GS60BRDQ2GMI

Dissipated Power
Figure 20, Transient Thermal Impedance Model
0.35
0.30
0.25
0.20
0.15
0.10
0.05
200
100
0.1
10
(Watts)
1
0
V
1
CE
Figure 17, Forward Safe Operating Area
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
(on)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
T
J
(°C)
1ms
0.00606
100ms
0.0731
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
100
0.260
0.226
RECTANGULAR PULSE DURATION (SECONDS)
T
C
(°C)
800
Figure 21, Operating Frequency vs Collector Current
200
100
0.1
10
Figure 18, Maximum Forward Safe Operating Area
1
V
I
1
C
CE
, COLLECTOR CURRENT (A)
Scaling for Different Case & Junction
Temperatures:
T
T
, COLLECTOR-TO-EMITTER VOLTAGE (V)
J
C
I
C
=
=
=
150°C
25°C
I
C(T
C
= 25
10
°
C)
*(
T
J
-
T
C
)/125
100
800