APT50GS60BRDQ2G Microsemi Power Products Group, APT50GS60BRDQ2G Datasheet
APT50GS60BRDQ2G
Specifications of APT50GS60BRDQ2G
APT50GS60BRDQ2GMI
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APT50GS60BRDQ2G Summary of contents
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Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode ® The Thunderbolt HS ™ series is based on thin wafer non-punch through (NPT) technology similar to ® the Thunderbolt series, but trades higher V switching losses enable operation at switching ...
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Symbol Parameter V Collector-Emitter Breakdown Voltage BR(CES) ∆V /∆T Breakdown Voltage Temperature Coeff BR(CES Collector-Emitter On Voltage CE(ON) V Diode Forward Voltage EC V Gate-Emitter Threshold Voltage GE(th) ∆V /∆T Threshold Voltage Temp Coeff GE(th Zero ...
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TYPICAL PERFORMANCE CURVES 150 125 100 COLLECTER-TO-EMITTER VOLTAGE (V) CE(ON) FIGURE 1, Output Characteristics 150 250µs PULSE TEST<0.5 % DUTY CYCLE 125 100 ...
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V = 15V 400V 25°C T =125° 4.7Ω 100µ 100 ...
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V (on) CE 1ms 1 100ms 0 100 V , COLLECTOR-TO-EMITTER VOLTAGE (V) CE Figure 17, Forward Safe Operating Area 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 Figure 19, Maximum Effective Transient Thermal Impedance, ...
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D.U.T. Figure 22, Inductive Switching Test Circuit Figure 24, Turn-off Switching Waveforms and Definitions Gate Voltage A Figure 23, Turn-on Switching Waveforms and Definitions 10 125° d(on) t Collector Current ...
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TO-247 Package Outline 4.69 (.185) 5.31 (.209) 15.49 (.610) 16.26 (.640) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 ...