APT33GF120BRG Microsemi Power Products Group, APT33GF120BRG Datasheet - Page 4

• Manufacturer Part Number: APT33GF120BRG
• Description: IGBT 1200V 52A 297W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT33GF120BRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 52A
• Power - Max: 297W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT33GF120BRGMI; APT33GF120BRGMI

Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 8, Typical V
Figure 10, Breakdown Voltage vs Junction Temperature
100
4.0
2.0
1.5
1.0
1.2
1.1
0.9
0.8
0.7
0.1
5.0
20
10
1
1
1
-50 -25
-50 -25
-50 -25
0.1
V
CC
V
T
T
R
T
GE
= 0.66 V
G
J
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
= 10
= +15V
CE
0
0
0
CES
(SAT) Voltage vs Junction Temperature
25
25
25
0.5 I
0.5 I
50
50
50
I
I
I
I
C1
C2
C1
C2
C2
C2
75
75
75 100 125 150
1.0
100 125 150
100 125 150
Figure 14,Typical Load Current vs Frequency
F, FREQUENCY (KHz)
10
Figure 13, Typical Switching Energy Losses vs Collector Current
Figure 11, Typical Switching Energy Losses vs Gate Resistance
Figure 9, Maximum Collector Current vs Case Temperature
60
40
20
16
12
0
8
4
0
4
3
2
1
0
25
0
0
V
V
I
C
CC
CC
V
V
T
, COLLECTOR CURRENT (AMPERES)
T
R
J
GE
GE
J
I
= 0.66 V
= 0.66 V
C
G
R
= +125°C
= +25°C
T
= I
G
= 10
= +15V
= +15V
20
C
50
, GATE RESISTANCE (OHMS)
, CASE TEMPERATURE (°C)
C2
10
CES
CES
100
E
off
40
75
E
on
E
E
20
off
on
I
LOAD
Power dissapation = 83W
Gate drive as specified
100
60
Duty Cycle = 50%
T
= I
T
sink
J
RMS
For Both:
= +125°C
= +90°C
of fundamental
30
125
80
APT33GF120BR
1000
100
150
40