APT33GF120BRG Microsemi Power Products Group, APT33GF120BRG Datasheet

IGBT 1200V 52A 297W TO247

APT33GF120BRG

Manufacturer Part Number
APT33GF120BRG
Description
IGBT 1200V 52A 297W TO247
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT33GF120BRG

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 25A
Current - Collector (ic) (max)
52A
Power - Max
297W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT33GF120BRGMI
APT33GF120BRGMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT33GF120BRG
Manufacturer:
MPD
Quantity:
12 000
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
MAXIMUM RATINGS (IGBT)
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
V
V
Symbol
Symbol
T
BV
CE
GE
V
V
J
I
I
V
E
I
I
,T
CES
GES
I
I
P
CGR
T
CES
CM
C1
C2
LM
(ON)
GE
CES
AS
(TH)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
Single Pule Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Fast IGBT
1
(V
GE
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= 20K )
= V
= V
= V
• Ultra Low Leakage Current
2
GE
GE
C
GE
C
C
CES
CES
GE
= 25°C
= 15V, I
= 15V, I
= 25°C
= 105°C
, I
= ±20V, V
, V
, V
C
GE
GE
GE
= 700µA, T
C
C
= 0V, T
= 0V, I
= 0V, T
= 25A, T
= 25A, T
G
CE
= 11
= 0V)
C
j
j
= 25°C)
= 125°C)
j
= 0.5mA)
= 25°C)
j
j
T
= 25°C)
= 125°C)
C
All Ratings: T
= 125 °C
C
= 25°C unless otherwise specified.
APT33GF120BR
1200
MIN
4.5
APT33GF120BR
G
-55 to 150
1200V
C
1200
1200
TYP
±20
104
297
300
E
5.5
2.7
3.3
52
33
66
65
TO-247
G
APT33GF120BR
±100
MAX
6.5
3.2
3.9
0.5
5.0
C
E
52A
Amps
Watts
UNIT
UNIT
Volts
Volts
mA
m
nA
°C
J

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APT33GF120BRG Summary of contents

Page 1

Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • Low Tail ...

Page 2

DYNAMIC CHARACTERISTICS (IGBT) Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller ") Charge (on) Turn-on Delay Time d ...

Page 3

V =17, 15 & 13V GE 11V 40 10V COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 1, Typical Output Characteristics (T 80 250µSec. Pulse Test V = 15V GE T ...

Page 4

1.5 1.0 -50 - JUNCTION TEMPERATURE (°C) J Figure 8, Typical V (SAT) Voltage vs Junction Temperature CE 1.2 1.1 1 0.9 0.8 0.7 ...

Page 5

A 10% B ( (off) V (on 90% 10% V (on (off) GE (on ...

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