APT27GA90BD15 Microsemi Power Products Group, APT27GA90BD15 Datasheet - Page 3

• Manufacturer Part Number: APT27GA90BD15
• Description: IGBT 900V 48A 223W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT27GA90BD15

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 14A
• Current - Collector (ic) (max): 48A
• Power - Max: 223W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT27GA90BD15MI; APT27GA90BD15MI

Typical Performance Curves
100
1.15
1.10
1.05
0.90
0.85
0.80
0.75
0.70
50
40
30
20
10
1.00
0.95
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
80
60
40
20
0
0
6
5
4
3
2
1
0
0
FIGURE 1, Output Characteristics (T
V
0
-50 -25
6
V
T
T
CE
GE
T
T
J
J
J
J
= 25°C
= 125°C
TEST<0.5 % DUTY
= 25°C
= 125°C
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
= 15V
C
V
FIGURE 3, Transfer Characteristics
GE
250μs PULSE
2
T
GE
1
= 7A
J
CYCLE
= 55°C
, GATE-TO-EMITTER VOLTAGE (V)
T
, GATE-TO-EMITTER VOLTAGE (V)
8
J
, JUNCTION TEMPERATURE
4
0
2
6
10
25
3
I
8
C
T
50
= 14A
J
= -55°C
12
T
75
J
10
= 150°C
<0.5 % DUTY CYCLE
4
250μs PULSE TEST
T
J
100
12
I
= 25°C.
C
14
5
= 28A
J
14
125
= 25°C)
6
16
16
150
250
225
200
175
150
125
100
16
14
12
10
75
50
25
50
40
30
20
10
FIGURE 8, DC Collector Current vs Case Temperature
8
6
4
2
0
FIGURE 6, On State Voltage vs Junction Temperature
5
4
3
2
1
0
0
0
0
FIGURE 2, Output Characteristics (T
0
V
0
25
CE
<0.5 % DUTY CYCLE
250μs PULSE TEST
T
I
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
J
4
= 25°C
V
= 14A
25
V
CE
V
GE
CE
50
= 15V.
= 450V
T
8
20
T
= 180V
J
C
, Junction Temperature (°C)
FIGURE 4, Gate charge
50
, Case Temperature (°C)
15V
GATE CHARGE (nC)
12
75
75
16
40
13V
11V
100
20
V
100
10V
CE
APT27GA90BD15
9V
= 720V
I
24
C
60
I
C
I
8V
= 28A
C
125
125
= 14A
7V
= 7A
28
J
6V
= 25°C)
150
32
80
150