APT27GA90BD15 Microsemi Power Products Group, APT27GA90BD15 Datasheet

APT27GA90BD15

Manufacturer Part Number

APT27GA90BD15

Description

IGBT 900V 48A 223W TO247

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT27GA90BD15.pdf (9 pages)

Specifications of APT27GA90BD15

Igbt Type

Voltage - Collector Emitter Breakdown (max)

900V

Vce(on) (max) @ Vge, Ic

3.1V @ 15V, 14A

Current - Collector (ic) (max)

48A

Power - Max

223W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT27GA90BD15MI
APT27GA90BD15MI

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Static Characteristics

Absolute Maximum Ratings

POWER MOS 8

through leading technology silicon design and lifetime control processes. A reduced E

gate charge and a greatly reduced ratio of C

delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the

poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even

when switching at high frequency.

Symbol

FEATURES

CE(ON)

SSOA

• Fast switching with low EMI

• Very Low E

• Ultra low C

• Low conduction loss

• Low gate charge

• Increased intrinsic gate resistance for low EMI

• RoHS compliant

BR(CES)

, T

CE(on)

GE(th)

GES

CES

ces

STG

tradeoff results in superior efﬁ ciency compared to other IGBT technologies. Low

Parameter

Collector Emitter Voltage

Continuous Collector Current @ T

Pulsed Collector Current

Gate-Emitter Voltage

Total Power Dissipation @ T

Switching Safe Operating Area @ T

Operating and Storage Junction Temperature Range

Lead Temperature for Soldering: 0.063" from Case for 10 Seconds

Collector-Emitter Breakdown Voltage

Collector-Emitter On Voltage

Gate Emitter Threshold Voltage

Zero Gate Voltage Collector Current

Gate-Emitter Leakage Current

Parameter

res

off

is a high speed Punch-Through switch-mode IGBT. Low E

for maximum efﬁ ciency

for improved noise immunity

High Speed PT IGBT

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

res

= 150°C

ies

provide excellent noise immunity, short

= 25°C unless otherwise speciﬁ ed

Test Conditions

= 14A

= 900V,

= 15V,

= 0V

= 0V, I

TYPICAL APPLICATIONS

• ZVS phase shifted and other full bridge

• Half bridge

• High power PFC boost

• Welding

• UPS, solar, and other inverters

• High frequency, high efﬁ ciency industrial

= ±30V

, I

= 1.0mA

= 1mA

off

= 25°C

= 125°C

= 25°C

= 125°C

is achieved

off

Combi (IGBT and Diode)

Min

900

APT27GA90BD15

79A @ 900V

-55 to 150

Ratings

Typ

900

223

300

±30

2.5

2.2

4.5

APT27GA90BD15

Max

1500

±100

350

3.1

900V

Unit

°C

μA

Related parts for APT27GA90BD15

APT27GA90BD15 Summary of contents

Page 1

... 1.0mA 15V 14A 1mA 900V ±30V GS Microsemi Website - http://www.microsemi.com APT27GA90BD15 is achieved off - off APT27GA90BD15 Combi (IGBT and Diode) Ratings 900 ±30 223 79A @ 900V -55 to 150 300 Min Typ Max 900 T = 25°C 2.5 3 125° 25°C 350 ...

Page 2

... GE L= 100uH 900V CE Inductive Switching (25° 600V 15V 14A 10Ω +25°C J Inductive Switching (125° 600V 15V 14A 10Ω +125°C J APT27GA90BD15 Min Typ Max Unit 1390 145 413 μJ 287 137 144 760 μJ 647 Min Typ Max Unit - - .56 °C/W 1 ...

Page 3

... JUNCTION TEMPERATURE J FIGURE 7, Threshold Voltage vs Junction Temperature T = 150° 25° -55° 25°C. J 250μs PULSE TEST <0.5 % DUTY CYCLE I = 28A 100 125 150 APT27GA90BD15 250 15V 225 13V 200 175 11V 150 10V 125 9V 100 COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° ...

Page 4

... T 25°C J 200 FIGURE 14, Turn-Off Energy Loss vs Collector Current 2000 1500 28A off, 1000 500 E 7A on2 off FIGURE 16, Switching Energy Losses vs Junction Temperature APT27GA90BD15 V =15V,T =125° =15V,T =25° 600V 10Ω 100μ COLLECTOR-TO-EMITTER CURRENT (A) CE ...

Page 5

... FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL C ies C oes C res 600 800 SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) T (°C) C .31601 .14513 APT27GA90BD15 1000 100 100 V , COLLECTOR-TO-EMITTER VOLTAGE CE FIGURE 18, Minimum Switching Safe Operating Area Note Duty Factor Peak θ 0.1 ...

Page 6

... J 90% t d(off Switching Energy Figure 22, Turn-off Switching Waveforms and Deﬁ nitions Gate Voltage Switching Energy Figure 21, Turn-on Switching Waveforms and Deﬁ nitions Gate Voltage Collector Voltage Collector Current APT27GA90BD15 10 125°C J 90% t d(on) Collector Current Collector Voltage ...

Page 7

... 667V 125° SINGLE PULSE - RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.676 0.504 0.00147 0.0440 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL = 25°C unless otherwise speciﬁ ed. C APT27GA90BD15 Min Type Max 2.5 3.06 1.92 Min Typ Max 235 - - - 185 - - 3 - 300 ...

Page 8

... Figure 3. Reverse Recovery Time vs. Current Rate of Change 15A 800 1000 1200 Figure 5. Reverse Recovery Current vs. Current Rate of Change 100 125 150 Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 200 APT27GA90BD15 400 T = 125°C 30A 667V R 350 300 15A 250 200 7.5A ...

Page 9

... BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT27GA90BD15 APT10035LLL D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 15.49 (.610) 16 ...

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