BAS 16 B5003 Infineon Technologies, BAS 16 B5003 Datasheet - Page 4

DIODE SW SGL HS 80V 250MA SOT-23

BAS 16 B5003

Manufacturer Part Number
BAS 16 B5003
Description
DIODE SW SGL HS 80V 250MA SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAS 16 B5003

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
80V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.25 A
Max Surge Current
4.5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16B5003INTR
BAS16B5003XT
SP000223866
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
Reverse recovery time
I
R
Test circuit for reverse recovery time
F
R
L
= 10 mA, I
= 100 Ω
= 0 V, f = 1 MHz
R
= 10 mA, measured at I
Ι
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00017
R
= 1mA ,
Pulse generator: t
Oscillograph: R = 50Ω, t
4
Symbol
C
t
rr
T
p
R
= 100ns, D = 0.05, t
min.
i
-
-
= 50Ω
r
= 0.35ns, C = 0.05pF
Values
typ.
-
-
max.
2
4
2009-09-28
BAS16...
r
= 0.6ns,
Unit
pF
ns

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